IPP60R450E6 datasheet

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• Маркировка
  IPP60R450E6
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP60R450E6 Continuous Drain Current: 9.2 A Current - Continuous Drain (id) @ 25?° C: 9.2A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 28nC @ 10V Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 620pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: * Package / Case: * Power - Max: 74W Power Dissipation: 74 W Rds On (max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V Resistance Drain-source Rds (on): 0.41 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3.5V @ 280?µA
• Количество страниц
  17 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  1,16 MB

IPP60R450E6 datasheet скачать

IPP60R450E6 datasheet